| PART |
Description |
Maker |
| 15-80-0109 0015800109 70567-0275 A-70567-0275 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| A-70567-0363 15-80-1501 0015801501 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 50 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 50 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 0010897082 010-89-7082 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 8 Circuits, 0.38渭m (15渭") Gold (Au) Selective Plating, Tin (Sn) PC Tail Pla
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 8 Circuits, 0.38μm (15μ) Gold (Au) Selective Plating, Tin (Sn) PC Tail Plating, 2.72mm (.107) PC Tail
|
Molex Electronics Ltd.
|
| A-70280-0280 010-87-9805 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 80 Circuits, 0.76渭m (30渭") Gold (Au) Selective Plating, Tin(Sn) PC Tail Pla
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 80 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating, Tin(Sn) PC Tail Plating, 2.72mm (.107) PC Tail
|
Molex Electronics Ltd.
|
| AT73C203 |
Power Management IC for Datacom Platforms 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PBGA100
The AT73C203 is a low-cost, ultra low-power, power and battery management IC designed to interface directly with portable and hand-held applications built around microprocessors requiring smart power management functions. It includes all r
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| 2SK2040 2SK2040JM 2SK2040-Z 2SK2040-Z-E1 2SK2040-Z |
High-freq. SW power supply, AC adapter power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SC5935P 2SC5935 2SC5935Q |
Power Device - Power Transistors - General-Purpose power amplification
SILICON NPN TRIPLE DIFFUSION PLANAR TYPE
|
Panasonic Semiconductor
|
|
